Thermally-driven H interaction with HfO2 films deposited on Ge(100) and Si(100)

Large magnetoresistance of bismuthÕgold films thermally deposited onto glass substrates

Bismuth thin films deposited onto glass substrates by thermal sublimation are polycrystalline with short mean free paths, multiple grain orientations, and disappointingly small magnetoresistance when compared to single crystals. Direct deposition onto thin gold buffer layers followed by a post-deposition anneal leads to significantly improved properties, namely, large grains oriented in the tri...

Rapid thermally annealed plasma deposited SiNx :H thin films: Application to metal–insulator–semiconductor structures with Si, In0.53Ga0.47As, and InP

Nanomechanical properties of sputter-deposited HfO2 and HfxSi1-xO2 thin films

The mechanical properties of sputter-deposited HfO2 and HfxSi1-xO2 films were studied as a function of composition using nanoindentation. The elastic modulus and hardness were measured at room temperature for as-deposited films of varying Hf content and for films subjected to annealing at 1000 C. The elastic modulus and hardness of as-deposited films were found to increase monotonically with in...

Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System

Hafnium oxide (HfO2) thin films have attracted much attention owing to their usefulness in equivalent oxide thickness scaling in microelectronics, which arises from their high dielectric constant and thermodynamic stability with silicon. However, the surface passivation properties of such films, particularly on crystalline silicon (c-Si), have rarely been reported upon. In this study, the HfO2 ...

Nanocolumnar Preferentially Oriented PSZT Thin Films Deposited on Thermally Grown Silicon Dioxide

We report the first instance of deposition of preferentially oriented, nanocrystalline, and nanocolumnar strontium-doped lead zirconate titanate (PSZT) ferroelectric thin films directly on thermal silicon dioxide. No intermediate seed or activation layers were used between PSZT and silicon dioxide. The deposited thin films have been characterised using a combination of diffraction and microscop...